Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311)A-oriented substrates

✍ Scribed by Vaccaro, P.O.; Fujita, K.

• Book ID: 117869628
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 140 KB
• Volume: 36
• Category: Article
• ISSN: 0018-9197
• DOI: 10.1109/3.848358