Optoelectronic aspects of strained Si1−xGex/Si quantum wells
✍ Scribed by S. Fukatsu
- Publisher
- Springer US
- Year
- 1995
- Tongue
- English
- Weight
- 924 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0957-4522
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📜 SIMILAR VOLUMES
The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained
P-type Sil\_xGe~/Si quantum well infrared photodetectors for thermal imaging applications have been grown by low pressure vapour phase epitaxy for the first time. Good control of periodicity in these pseudomorphic multiple quantum well structures on Si substrates was demonstrated by real-time ellips