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Opto-Electric Effects in Ge-GaAs p-n Heterojunctions

✍ Scribed by Agusta, B.; Anderson, R. L.


Book ID
120372620
Publisher
American Institute of Physics
Year
1965
Tongue
English
Weight
623 KB
Volume
36
Category
Article
ISSN
0021-8979

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## Abstract n‐ZnO film grown by electrodeposition (ECD) on p‐GaAs substrate was characterized by structural, optical, and electrical techniques. X‐ray diffraction (XRD) measurement clearly showed formation of ZnO thin film with a strong __c__‐axis (0002) preferential orientation. Photoluminescence