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Optimum doping profile of power MOSFET epitaxial layer

โœ Scribed by Xing-Bi Chen; Chenming Hu


Book ID
114594123
Publisher
IEEE
Year
1982
Tongue
English
Weight
234 KB
Volume
29
Category
Article
ISSN
0018-9383

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A novel method of accurately determining the doping profile under the gate regioq of an enhancement mode MOSFET using d.c. measurements has been proposed-:. This method computes point-to-point impurity concentration in the gate region by utilising the h, -V=, data of the MOSFET operating in its line