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Optimum control of oscillatory processes

✍ Scribed by I. M. Vorontsov


Publisher
Springer US
Year
1975
Tongue
English
Weight
381 KB
Volume
9
Category
Article
ISSN
1573-8337

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Doping process control in silicon epitax
✍ Dr. F. Richter; Dipl.-Chem. G. KΓ³sza; Dr. R. Sperling; Dr. P. ValkΓ³ πŸ“‚ Article πŸ“… 1985 πŸ› John Wiley and Sons 🌐 English βš– 349 KB

llealizatiuii of Optiiiiuin Coiitrul Fuiictiun ## 1. I n Crod uct,iuii 'l'lie topic of this paper is the fortilation of defined doping profilcs in silicon epitaxial layers grown hy chetiiical vapour deposition. For t.his purpose we treat,ed the epitaxial reactor as a linear cont,rol systeni, using