## Abstract An integrated voltage‐controlled oscillator (VCO) operating at 1.75 GHz is designed using the InGaP/GaAs HBT process. The proposed noise‐removal circuit and FR‐4 substrate structure in this paper show an improved characteristic of phase noise and a smaller VCO dimension, respectively. T
Optimized phase noise of LC VCO using an asymmetric-inductance tank in InGaP/GaAs HBT technology
✍ Scribed by Jae-Ho Yoon; Sang-Hun Lee; Ah-Rah Koh; Gary P. Kennedy; Nam-Young Kim
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 274 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This paper describes fully integrated low‐phase‐noise MMIC voltage‐controlled oscillators (VCOs) for an adaptive‐feedback interference‐cancellation system (AF‐ICS). The asymmetric‐ and symmetric‐inductance tank structures were combined with VCOs to obtain VCOs with low‐phase‐noise performance. The asymmetric‐inductance tank VCO (AIT‐VCO) has a tuning range of 261 MHz with an output power of −11.53 dBm at 1.715 GHz. Furthermore, the phase noise of this VCO is −117.3 dBc/Hz and −129.3 dBc/Hz at 100‐kHz and 1‐MHz offset frequencies, respectively. The symmetric‐inductance tank VCO (SIT‐VCO) has a tuning range of 160 MHz with an output power of −15 dBm at 1.664 GHz. Furthermore, the phase noise of this VCO is −102.4 dBc/Hz and −121.9 dBc/Hz at 100‐kHz and 1‐MHz offset frequencies, respectively. Each of these VCOs occupies a total chip area of 0.9 × 0.9 mm^2^. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1035–1040, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21593
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