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Optimization of the doping profile in Si permeable base transistors for high-frequency, high-frequency, high-voltage operation

✍ Scribed by Rathman, D.D.

Book ID: 114536846
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 920 KB
Volume: 37
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.57174

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