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Optimization of Schottky barrier carbon nanotube field effect transistors

✍ Scribed by M. Pourfath; E. Ungersboeck; A. Gehring; B.H. Cheong; W.J. Park; H. Kosina; S. Selberherr


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
187 KB
Volume
81
Category
Article
ISSN
0167-9317

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For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, I on /I off ratio, subth