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Optimization of magnetic parameters for toggle magnetoresistance random access memory

✍ Scribed by Shengyuan Wang; Hideo Fujiwara


Book ID
108184015
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
280 KB
Volume
286
Category
Article
ISSN
0304-8853

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Micromagnetic simulation of critical fie
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## Abstract A micromagnetic simulation is carried out to examine the effects of the shape of exchange‐coupled trilayer cells on the magnetization switching behavior, in an effort to reduce the switching field in the toggle‐mode magnetic random access memory. Two different shapes of rectangular and