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Optimising dislocation-engineered silicon light-emitting diodes

✍ Scribed by M. Milosavljević; M.A. Lourenço; G. Shao; R.M. Gwilliam; K.P. Homewood


Publisher
Springer
Year
2006
Tongue
English
Weight
449 KB
Volume
83
Category
Article
ISSN
0721-7269

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## Abstract We investigated correlation between concentration of deep level defects at dislocations, detected by deep level transient spectroscopy (DLTS) and the efficiency of dislocation related luminescence in Si samples with dislocation density of about (3–5) × 10^8^ cm^–2^. We show that signifi