Optimal surface functionalization of silicon quantum dots
β Scribed by Li, Q. S.; Zhang, R. Q.; Lee, S. T.; Niehaus, T. A.; Frauenheim, Th.
- Book ID
- 119948083
- Publisher
- American Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 917 KB
- Volume
- 128
- Category
- Article
- ISSN
- 0021-9606
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We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to