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Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN

✍ Scribed by F. K. Koschnick; K. Michael; J. -M. Spaeth; B. Beaumont; P. Gibart; E. Calleja; E. Munoz

Publisher
Springer US
Year
2000
Tongue
English
Weight
153 KB
Volume
29
Category
Article
ISSN
0361-5235

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GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light emitting diodes (LEDs). p-type is successfully achieved using Mg, obtaining hole concentrations in the range of 1 Γ‚ 10 17 cm Γ€3 . Although an in