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Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate

✍ Scribed by Shubha; Pal, B.B.; Khan, R.U.


Book ID
114537159
Publisher
IEEE
Year
1998
Tongue
English
Weight
255 KB
Volume
45
Category
Article
ISSN
0018-9383

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## Infra-red transmission and electrical characteristics of single crystal GaAs substrates implanted with 70 MeV "'Sn ions have been investigated after implantation andsubsequentannealing treatments. The optical density cxx is found to increase with implanted dose overphoton energy range 0.6-1.4 e