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Optical transitions in (Si)4 (Ge)4 superlattices

โœ Scribed by D.T. Hughes; S. Brand


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
271 KB
Volume
5
Category
Article
ISSN
0749-6036

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We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films.