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Optical switching of au-doped VO2 sol-gel films

✍ Scribed by E Cavanna; J.P Segaud; J Livage


Book ID
114067152
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
538 KB
Volume
34
Category
Article
ISSN
0025-5408

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Resistive switching properties of sol–ge
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Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during