The accumulation and depletion layers on each side of a Double Barrier Diode (DBD) are believed to have an important influence on DC and high frequency behaviour of such devices. A magnetic field (B] parallel to the growth axis induces Landau quantization in the structure. Very large current oscilla
β¦ LIBER β¦
Optical studies of tunneling in double barrier diodes
β Scribed by S.R. Andrews; A.J. Turberfield; B.A. Miller
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 420 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0749-6036
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We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu