Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
β Scribed by Furtmayr, Florian; Vielemeyer, Martin; Stutzmann, Martin; Laufer, Andreas; Meyer, Bruno K.; Eickhoff, Martin
- Book ID
- 121474639
- Publisher
- American Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 611 KB
- Volume
- 104
- Category
- Article
- ISSN
- 0021-8979
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π SIMILAR VOLUMES
The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi
## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it