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Optical Properties of RF-MBE Grown AlGaAsN

✍ Scribed by K. Yamamoto; M. Uchida; A. Yamamoto; A. Masuda; A. Hashimoto

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
107 KB
Volume
234
Category
Article
ISSN
0370-1972

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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic