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Optical properties of plasma-assisted molecular beam epitaxy grown InN/sapphire

✍ Scribed by Talwar, Devki N.; Liao, Ying Chieh; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

Book ID
122106247
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
669 KB
Volume
37
Category
Article
ISSN
0925-3467

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## Abstract With the material quality of undoped indium nitride significantly improved, attention has more recently turned towards achieving control of the electrical properties of this infrared bandgap semiconductor. Of the candidate acceptors, only Mg has been reported in detail, primarily as it