This paper reports on the optical and structural properties of strained type-I Ga 1 Γ x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the g
β¦ LIBER β¦
Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE
β Scribed by M.-E. Pistol; S. Nilsson; P. Silverberg; L. Samuelson; M. Rask; G. Landgren
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 363 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0749-6036
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