We have investigated the polarization effect of optical process in the vertically coupled InGaAs quantum dot (QD) triple layers by varying the thickness of GaAs spacer layer. The transverse electric (TE)/transverse magnetic (TM) ratio for the ground state emission decreases from near 4 to 1.5 as the
β¦ LIBER β¦
Optical properties of modulation-doped InGaAs vertically coupled quantum dots
β Scribed by K.Y. Chuang; T.E. Tzeng; David J.Y. Feng; T.S. Lay
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 959 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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