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Optical properties of ion implanted AINx

✍ Scribed by Yisheng Dai; Masaya Iwaki; Katsuo Takahashi; Takanobu Fujihana; Kenzo Kobayashi; Susumu Namba


Book ID
113280276
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
397 KB
Volume
39
Category
Article
ISSN
0168-583X

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The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing