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Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

โœ Scribed by Jensen, J. R.; Hvam, J. M.; Langbein, W.

Book ID
120261752
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
323 KB
Volume
86
Category
Article
ISSN
0021-8979

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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with