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Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation

✍ Scribed by Erman, M.; Theeten, J. B.; Chambon, P.; Kelso, S. M.; Aspnes, D. E.


Book ID
121685846
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
692 KB
Volume
56
Category
Article
ISSN
0021-8979

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Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t