Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions
β Scribed by M. Lachab; H. Sakaki
- Book ID
- 108060427
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 961 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
The structural and the optical propertics of lnAs layers grown on high index GaAs surfaces by molecular beam epitaxy are investigated in order to understand the formation and the self-organization of quantum dots (Ql)s) on novel index surfaces. Four different GaAs substrate orientations have been ex
Bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately. However, wide implementation of BQDs is hindered by the complicated growth procedures, which involve two sets of growth rate and temperature for t