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Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature

✍ Scribed by Kim, S. T.; Amano, H.; Akasaki, I.; Koide, N.


Book ID
120501117
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
450 KB
Volume
64
Category
Article
ISSN
0003-6951

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## Abstract We investigate the gain formation properties of In~__x__~ Ga~1–__x__~ N laser diodes emitting at 404 nm and 470 nm (sample A and B, respectively). Employing the Hakki–Paoli method, their optical gain spectra were measured at 298 K and 333 K. Since spatial fluctuations of the well width