Optical emission spectroscopy of CF4+O2plasmas using a new technique
β Scribed by H. Kawata; Y. Takao; K. Murata; K. Nagami
- Book ID
- 105039119
- Publisher
- Springer
- Year
- 1988
- Tongue
- English
- Weight
- 939 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0272-4324
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Resist trimming process using CF / O has been developed for sub-0.1 mm polysilicon gate patterning using 4 2 conventional 248-nm lithography. This process allows the successful fabrication of 80-nm MOS devices. The trimming step is performed in situ as part of the polysilicon gate etching process. T
## Abstract A sterilization process with the use of RFβgenerated (13.56 MHz) CF~4~/O~2~ gas plasma was optimized in regards to power, flow rate, exposure time, and RFβsystem type. The dependency of the sporicidal effect on the spore inoculum positioning in the chamber of the RF systems was also inv