The homogeneous hnewidth (I',,~~) of the O-O St + So transitIon of free-base porphin (HzP) m polyethylene and Iglycerol has been studled via photochemical hole-bummg down to 0.3 K On lowermg the temperature the rhom a T1-3 relatton previously observed goes over to a linear dependence at the point wh
Optical dephasing of impurities in amorphous organic solids down to 0.3 K
✍ Scribed by H.P.H. Thijssen; R. van den Berg; Silvia Völker
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 158 KB
- Volume
- 31-32
- Category
- Article
- ISSN
- 0022-2313
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📜 SIMILAR VOLUMES
The standard tunnel model together with the diagonal modulation theory of dephasing has previously been used to explain the above power law for impurity electronic transitions for Ts 10 K. Crude approximations made in averaging over the two-level system (TLS) parameters led to the widely held view t
Spectral holes have been burnt in the S, Go O-O transition of resorufin in polymethylmethacrylate (PMMA) and glycerol, and of free-base porphin (H,P) in PMMA and polyethylene (PE). The holewidths follow a T 'J dependence over almost two orders of magnitude in temperature and extrapolate to the fluor
## Abstract The use of proton CRAMPS NMR with varying cycle time and gain is shown to avoid the problems of dynamic range and probe background, and to allow residual solvent in some organic crystals such as durene to determined with an accuracy of ≤0.005%. Copyright © 2001 John Wiley & Sons, Ltd.