Superior Characteristics of RuO2/GaN Sch
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Shin, Sang-Hoon ;Jung, Byung-Kwon ;Lee, Jae-Hoon ;Lee, Myoung-Bok ;Lee, Jung-Hee
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Article
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2001
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John Wiley and Sons
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English
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A RuO 2 /GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO 2 /GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm 2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Sch