Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had le
✦ LIBER ✦
Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition
✍ Scribed by Sánchez-Marcos, J. ;Ochando, I. M. ;Galindo, R. Escobar ;Martínez-Morillas, R. ;Prieto, C.
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 480 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Ti‐doped In~2~O~3~ (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB‐PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 × 10^−5^ Ω cm. Finally, the band‐gap energy evolution is studied for the set of samples.
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