Optical and microstructural properties of self-assembled InAs quantum structures in silicon
✍ Scribed by Prucnal, Sławomir ;Turek, Marcin ;Drozdziel, Andrzej ;Pyszniak, Krzysztof ;Wójtowicz, Artur ;Zhou, Sheng-Qiang ;Kanjilal, Alohe ;Shalimov, Artem ;Skorupa, Wolfgang ;Zuk, Jerzy
- Book ID
- 111489256
- Publisher
- Walter de Gruyter GmbH
- Year
- 2011
- Tongue
- English
- Weight
- 936 KB
- Volume
- 9
- Category
- Article
- ISSN
- 2391-5471
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In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present
## Abstract The work is an experimental study of optical spin polarization in InAs/GaAs quantum dots (QDs) with 2 resident electrons or holes. A capture of a photo‐generated electron‐hole pair into such a QD creates a negative or positive tetron (double‐charged exciton). Spin polarization was regis