✦ LIBER ✦

Optical and electrical properties of Si1−x−yGexCy thin films and devices

✍ Scribed by A.St Amour; L.D Lanzerotti; C.L Chang; J.C Sturm

Book ID: 108388969
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 507 KB
Volume: 294
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(96)09212-7

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical properties of ZrO2 films on S

Electrical properties of ZrO2 films on Si1−x−yGexCy epitaxial layers

✍ S. Chatterjee; G.K. Dalapati; S.K. Samanta; C.K. Maiti 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 116 KB

Growth of Si1 − x − yGexCy multi-quantum

Growth of Si1 − x − yGexCy multi-quantum wells: structural and optical properties

✍ P. Boucaud; C. Guedj; F.H. Julien; E. Finkman; S. Bodnar; J.L. Regolini 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 506 KB

Electrical and optical properties of Ge2

Electrical and optical properties of Ge20SbxSe80−x thin films

✍ R.M. Mehra; Rajesh Kumar; P.C. Mathur 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 616 KB

Low-temperature molecular beam epitaxy o

Low-temperature molecular beam epitaxy of Si1−x−yGexCy/Si quantum well structures: electrical and optical properties

✍ D Grützmacher; R Hartmann; P Schnappauf; U Gennser; E Müller; D Bächle; A Domman 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 427 KB

Optical and electrical properties of amo

Optical and electrical properties of amorphous Si1 −xCx:H films

✍ B. A. Najafov; G. I. Isakov 📂 Article 📅 2010 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 260 KB

Diffusion and electrical activity of cop

Diffusion and electrical activity of copper in Si1−x−yGexCy alloys

✍ A Hattab; M.O Aboelfotoh; G Tremblay; F Meyer; J Kolodzey; H.J Osten; C Dubois 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 142 KB

We investigate copper diffusion in Si-rich Si Ge C (x,20%) and Ge-rich (x593%) Si Ge layers. 12x 2y x y 12x x The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations o