Y 2 O 3 thin films were deposited by ion beam assisted deposition (IBAD) and the effects of fabrication parameters such as substrate temperature and ion energy on the structure, optical and electrical properties of the films were investigated. The results show that the deposited Y 2 O 3 films had le
Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition
โ Scribed by Zhi Yan; Zhi Tang Song; Wei Li Liu; Qing Wan; Fu Min Zhang; Song Lin Feng
- Book ID
- 108287904
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 182 KB
- Volume
- 492
- Category
- Article
- ISSN
- 0040-6090
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๐ SIMILAR VOLUMES
## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80โ120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion
Silicon nitride (SiN x ) films were prepared by ion-assisted deposition process. The films were analyzed by measurement of scanning electron microscopy (SEM), Fourier transform infrared spectrometry (FTIR), Xray photoelectron spectrometry, spectrophotometer, and ellipsometer measurements. The effect