investieations on solar thermal collectors and solar systems within the precedyng IEA Task X (1985)(1986)(1987)(1988)(1989)(1990)(1991) as well as further studies in this field by the group itself formed a basis for this work. The procedure was formulated as g standard, and submitted to IS0 at the b
Optical and electrical properties of a-SixC1−x:H films prepared by glow discharge from SiH4 and C2H4
✍ Scribed by Chen Guang-hua; Zhang Fang-qing; Du Ning; Wang Hui-sheng
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 346 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0165-1633
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Reaction rate constartls of SiHI(%'At) have been directly measured for the first time using the laser photolysis-laser-induced fluorescence method. The preparation of SiH: radical in the laser photolysis (193 m-n) or phenylsilane and the concentration of the radiczd is demonstrated by a dye laser at
Plasma-polymerized deposition of an acetylene-hydrogen-silane mixture (C 2 H 2 -H 2 -SiH 4 ) to obtain thin film with good wear behavior on a high-density polyethylene (HDPE) surface was present in this work. It was found that the bond between thin film and HDPE substrate was excellent and H 2 gas i