✦ LIBER ✦

Operation of SiGe channel heterojunction p-MOSFET

✍ Scribed by Philippe Dollfus; François-Xavier Musalem; Sylvie Galdin; Patrice Hesto

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of SiGe quantum-well p-

✍ J.-O. Weidner; K. R. Hofmann; F. Hofmann; L. Risch 📂 Article 📅 1995 🏛 Springer US 🌐 English ⚖ 485 KB

Modeling of hole confinement gate voltag

✍ G.F. Niu; G. Ruan; D.H. Zhang 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 397 KB

The effect of substrate bias in bulk and

✍ Guo-Fu Niu; Gang Ruan 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 223 KB

Fabrication of strained-Si channel p-MOS

✍ Jingchun Li; Mohua Yang; Jing Tan; Dinglei Mei; Jing Zhang; Wanjing Xu 📂 Article 📅 2006 🏛 SP Science Press 🌐 English ⚖ 241 KB

Threshold voltage and inversion charge m

✍ Niu, G.F.; Ruan, D.G. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 580 KB

Performance of Trench Power MOSFET With

✍ Shan Sun; Jiann-Shiun Yuan; Shen, Z.J. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 669 KB