✦ LIBER ✦
Threshold voltage and inversion charge modeling of graded SiGe-channel modulation-doped p-MOSFETs
✍ Scribed by Niu, G.F.; Ruan, D.G.
- Book ID
- 114536391
- Publisher
- IEEE
- Year
- 1995
- Tongue
- English
- Weight
- 580 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0018-9383
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