𝔖 Bobbio Scriptorium
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Operation of a VBL memory read/write gate

✍ Scribed by Wu, J.; Humphrey, F.


Book ID
114648417
Publisher
IEEE
Year
1986
Tongue
English
Weight
774 KB
Volume
22
Category
Article
ISSN
0018-9464

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Entirely solution-processed write-once-r
✍ Jianpu Wang; Xiaoyang Cheng; Mario Caironi; Feng Gao; Xudong Yang; Neil C. Green πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 455 KB

We investigate the mechanism of operation of low-power write-once-read-many-times (WORM) memory devices based on injection of electrons from ZnO into PEDOT:PSS (polydioxythiophene doped with polystyrenesulfonic acid). Using Raman spectroscopy and in situ absorbance measurements, we directly observe