Entirely solution-processed write-once-read-many-times memory devices and their operation mechanism

✍ Scribed by Jianpu Wang; Xiaoyang Cheng; Mario Caironi; Feng Gao; Xudong Yang; Neil C. Greenham

• Book ID: 104076202
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 455 KB
• Volume: 12
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2011.04.010

✦ Synopsis

We investigate the mechanism of operation of low-power write-once-read-many-times (WORM) memory devices based on injection of electrons from ZnO into PEDOT:PSS (polydioxythiophene doped with polystyrenesulfonic acid). Using Raman spectroscopy and in situ absorbance measurements, we directly observe the change of doping level of PEDOT during the device switching. Our results clearly show that the change of device conductance is due to the dedoping of p-doped PEDOT by injected electrons. Based on this understanding, we further demonstrate an entirely solution-processed low-power WORM device by inkjet printing metal electrodes onto arbitrary substrates.