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One-dimensional extended lines of divacancy defects in graphene

✍ Scribed by Botello-Méndez, A. R.; Declerck, X.; Terrones, M.; Terrones, H.; Charlier, J.-C.


Book ID
125421524
Publisher
The Royal Society of Chemistry
Year
2011
Tongue
English
Weight
389 KB
Volume
3
Category
Article
ISSN
2040-3364

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An extended layer of defected SiC has been observed in SiC subjected to heat treatments at 850 and 1050 °C prior to growth of graphene by thermal decomposition. This layer is found to strongly affect the graphene thickness, surface morphology, and Raman spectrum of graphene grown on it. By comparing