On the theory of normal growth of crystals in binary systems

✍ Scribed by Yu. V. Zelenev; Dr. Yu. A. Baikov; A. P. Molotkov

• Publisher: John Wiley and Sons
• Year: 1979
• Tongue: English
• Weight: 592 KB
• Volume: 14
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19790140404

✦ Synopsis

Abstract

Crystallization processes of binary systems are considered, in which solid particles consisting of components A and B grow from the melt in monolayers of a two‐phase boundary zone by a mechanism of spontaneous thermal equilibrium type concentration fluctuations. The calculation is based on probability distribution functions. The region of small supercoolings of the binary system melt‐crystal proves most valid for this investigation. The change of the mean crystallization rate of the two‐phase boundary zone with the supercooling of the melt shows a linear behaviour. The dependence of the kinetic coefficient on the degree of the atomic roughness of the phase boundary with different numbers of monolayers in the phase boundary, the total number of particles in each monolayer, and a certain roughness are connected with the energy of positional disorder in binary systems.