On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1−xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor

✍ Scribed by M. Caymax; J. Poortmans; A. Van Ammel; J. Vanhellemont; M. Libezny; J. Nijs; R. Mertens

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 469 KB
• Volume: 241
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(94)90452-9