✦ LIBER ✦
Low temperature selective growth of epitaxial Si and Si1−xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
✍ Scribed by M. Caymax; J. Poortmans; A. Van Ammel; M. Libezny; J. Nijs; R. Mertens
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 449 KB
- Volume
- 241
- Category
- Article
- ISSN
- 0040-6090
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