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On the peculiarities of silicon amorphization at ion bombardment

✍ Scribed by Gerasimov, A. I. ;Zorin, E. I. ;Pavlov, P. V. ;Tetelbaum, D. I.

Book ID
105367775
Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
881 KB
Volume
12
Category
Article
ISSN
0031-8965

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## Cross-sectional electron microscopy and related diffraction techniques have been applied to the characterization of argon-and xenon-bombardment-induced amorphization of silicon at room temperature. "Damage" calculations have been performed to provide a theoretical support to the observations. Com