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On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

✍ Scribed by E. I. Gol’dman; A. G. Zhdan; G. V. Chucheva


Book ID
110120398
Publisher
Springer
Year
2000
Tongue
English
Weight
77 KB
Volume
34
Category
Article
ISSN
1063-7826

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