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On the operation configuration of SiGe HBTs based on power gain analysis

✍ Scribed by Zhenqiang Ma; Ningyue Jiang


Book ID
114617688
Publisher
IEEE
Year
2005
Tongue
English
Weight
331 KB
Volume
52
Category
Article
ISSN
0018-9383

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A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperatur