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On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz

✍ Scribed by Alina Caddemi; Giovanni Crupi

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 431 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25304

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✦ Synopsis

Abstract

The present article details a technique for measuring and modeling the noise properties of on wafer active solid state devices. This technique is based on 50 Ω noise figure measurements up to 26.5 GHz. A good agreement between measurements and model simulations is obtained at such high frequency, thanks to the inclusion of the nonquasi‐static effect associated to the intrinsic feed‐back resistance. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1799–1803, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25304

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