On the new element hafnium
β Scribed by Coster, D. ;Hevesy, G.
- Publisher
- Wiley (John Wiley & Sons)
- Year
- 1923
- Weight
- 126 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0368-4075
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β¦ Synopsis
Mar. 1 4 1093 t,licsc results in tlicmsclrcs iiiny iiinrli nn :itlvancc it is the siiii1ilicity of tlic \ \ . l ~o l ~ tliitt secins to bc so iniportant, for it Iciitls onc to liclic-c tliiit tlic vitiil ~iroccsscs of tlic liiglicr nniin:ils arc cqiinliy siiiiplc ant1 so, pcrlinps, i t iiiny bc tliiit tlic cltcniistry of tlicir tlcrnnge~uciit or discnsc is siniplc, too.
π SIMILAR VOLUMES
discusscs tlic modification of the rncchanistic hypotlicsis due to Hartsockcr, who held that thcrc w r c two primc materials, onc a continuous subtlc fluid nl\vnys in motion, the otlicr I I dcnscr mntci in1 tlividcd into pnrticlcs of varying sllnpcs. Gradually, lio\vc\-cr, tlic idca that tlic s h a
Phase equilibria in the Hf+B+C system were calculated by thermodynamic modeling. The liquid phase was described as a substitutional solution using the Redlich+Kister formalism for the excess Gibbs energy and a reaction scheme was constructed for the entire ternary system. With respect to the increas
## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
A new alkoxide precursor, Hf(mp) 4 [mp = 3-methyl-3-pentoxide, OC(CH 3 )(C 2 H 5 ) 2 ] has been employed in the atomic layer deposition (ALD) of HfO 2 thin films using water (H 2 O) as the oxygen source. The self-limiting ALD process via alternate surface reactions of Hf(mp) 4 and H 2 O is confirmed