On the nature of electroluminescence at 1.5 μm in the breakdown mode of reverse-biased Er-doped siliconp-n-junction structures grown by sublimation molecular beam epitaxy

✍ Scribed by A. V. Kornaukhov; A. A. Ezhevskii; M. O. Marychev; D. O. Filatov; V. G. Shengurov

• Book ID: 111444839
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 219 KB
• Volume: 45
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s106378261101012x