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On the mechanism of blistering phenomenon in high temperature H-implanted GaN

โœ Scribed by Dadwal, U.; Singh, R.

Book ID
119996691
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
868 KB
Volume
102
Category
Article
ISSN
0003-6951

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The influence of post-annealing time on blistering characteristics induced by 5 ร‚ 10 16 cm ร€2 ion-implanted H in Si <1 0 0> was studied in terms of the formation and growth of blisters. Ion energies consisted of 40 and 100 keV. Post-annealing treatments were carried out using furnace annealing (FA)