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On the measurement of SSB noise figure using sideband cancellation

✍ Scribed by Collins, C.E.; Pollard, R.D.; Miles, R.E.; Dildine, R.G.

Book ID
114543416
Publisher
IEEE
Year
1996
Tongue
English
Weight
727 KB
Volume
45
Category
Article
ISSN
0018-9456

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## Abstract A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise‐correlation matrix of an elemental section of the device from the device's noise figure, measured for only one source‐impedance state at a number of fre